Ukutsalwa kwe-wafer yinkqubo ebalulekileyo kwimveliso ye-semiconductor, equka ukusebenza kwe-dopant, ukubuyiselwa kwe-lattice, kunye nokwakheka kwe-ultra-shallow junction (USJ). Ukutsalwa kwe-furnace eqhelekileyo kunye nokusetyenzwa kwe-thermal ngokukhawuleza (RTP) kuchaphazeleka yibhajethi ephezulu yobushushu, ukusasazeka kwe-dopant okulawulwa kakubi, kunye nokungalingani ngokwaneleyo, okwenza ukuba zinganeli kwiindawo zobuchwepheshe obuphambili kwi-7 nm, 5 nm, nangaphezulu—ingakumbi kwizakhiwo ze-Gate-All-Around (GAA) kunye ne-3D NAND flash memory. Ukutsalwa kwe-wafer okusekwe kwi-laser, kunye nokukhanyiswa kwayo kwamandla aphezulu okwethutyana, ukuchaneka kwendawo ye-micron, kunye nokusasazeka okuncinci kobushushu, kuye kwavela njengenkqubo ephambili yesizukulwana esilandelayo yokuhlangabezana nezi mfuno zokuvelisa zinzima.
Umgaqo oPhambili wokuFudumeza ngeLaser
Intloko yokufudumeza ye-laser ye-Wave Optics inoyilo olukhethekileyo lwe-optical olunikezela ngemitha ye-laser enamandla aphezulu, efanayo nobushushu ukuze kukhanye ngokuchanekileyo umphezulu we-wafer. I-laser eluhlaza inika ukufana okuhle kokufunxa kunye nezixhobo ezisekwe kwi-silicon (kuquka i-SiC), okuvumela unyango lobushushu olusebenza kakuhle ngaphandle kokonakalisa i-wafer. Oku kwenza kube lula ukuphinda kusetyenziswe umaleko owonakeleyo ofakwe kwi-ion kunye nokusebenza kakuhle kwe-dopant. Emva koko, ukuqhuba okuphezulu kobushushu be-substrate kwenza kube lula ukupholisa ngokukhawuleza, okuqinisa isakhiwo se-lattice kwaye kuthintele ukusasazeka kwe-dopant. Le nkqubo iphumelela ukuvelisa ii-junctions ezinzulu kakhulu kunye nokusebenza kakuhle kwe-activation kunye neprofayili ye-junction enyukayo (ngokungxama).
Ukufuthwa kweLaser Heating Kubalulekile Ekuphuculeni iWafer Processing Yield
- Ukufana kweMisebe: Ukufana kwamandla kwendawo yemisebe ethe tyaba idlula i-95% (eqhelekileyo), okuphelisa ukunyibilika kakhulu kwendawo okanye ukuncipha komswakama.
- Uzinzo lwaMandla: Ukuguquguquka kwamandla okukhupha rhoqo kungaphantsi kwe-2%, okuqinisekisa ukuhambelana okuhle kwe-wafer ukuya kwi-wafer kunye ne-batch-to-batch.
- Ukuchaneka koMfanekiso woMphezulu: Izixhobo ezibonakalayo zinexabiso le-PV/RMS elikwi-nanometer kunye nokuphazamiseka kwe-wavefront okulawulwa kakuhle, okuthintela umonakalo we-hot-spot.
- Ubunzulu boGxilo kunye nokuBumba imiqadi: Ubunzulu bogxilo obunokulungiselelwa ngokwezifiso kunye nokuhlanganiswa kwe-beam integrator homogenization kuxhasa ukuskenwa kwe-full-field yee-wafers ezinkulu.
- Ukulinganisa ubude beWavelength: Kwenzelwe ukuba kubekho amaza e-silicon kunye nee-semiconductors zesizukulwana sesithathu (umz., iSiC, iGaN) ukuze kuphuculwe ukusetyenziswa kwamandla.
Iingenelo ezintathu eziphambili kune-Annealing eqhelekileyo
1. Ukunciphisa okugqwesileyo ukusasazeka kwe-dopant -Ukuvezwa kobushushu kunqunyelwe kuluhlu lwe-nanosecond-to-millisecond kunye nokusasazeka kwe-dopant okuphantse kube zero, amandla angenakufikelelwa yi-furnace annealing okanye i-RTP.
2. Ixabiso eliphantsi lobushushu kunye nomonakalo omncinci wesixhobo- Kuphela ngumphezulu we-wafer ofumana amaqondo obushushu aphezulu okwethutyana, nto leyo ebangela ukuba kungabikho tshintsho lobushushu kwisakhiwo sesixhobo okanye izakhiwo zaso kwaye kungabikho monakalo phakathi kwaso.
3. Ukufakelwa kwe-annealing kwindawo ekhethiweyo ngokuchanekileyo -Iindawo ze-micron ezinokulungiswa zixhasa ukufakwa kwe-annealing kwindawo ethile yokudibanisa i-3D kunye nezixhobo ezidibeneyo ezahlukeneyo.
Imizekelo yesicelo
Ii-aplikeshini ziquka ukusebenza komthombo/ukukhupha amanzi, ukulungiswa kwetshaneli, kunye nokutsalwa kwe-ohmic contact annealing kwi-advanced logic (GAA/CFET), i-DRAM/3D NAND, izixhobo zamandla ze-SiC/GaN, i-SOI, kunye nezixhobo ze-micro/nano. Ukutsalwa kwe-laser kubonelela ngophuculo ngaxeshanye kwimveliso kunye nokusebenza kwesixhobo.
I-laser annealing itshintsha ukucubungula i-wafer ukusuka kwi-global (blanket) annealing ukuya kwi-precision local annealing. Itekhnoloji yayo enamandla ye-optical ixhasa ukuqhubeka kokulinganisa kunye nokuphumelela kokusebenza kwee-semiconductor nodes eziphambili.
Iphepha leeNkcukacha zeMveliso
| Ipharamitha | Inkcazo |
| Amandla | 60-20000W |
| Ubude bamaza | Ingenziwa ngokwezifiso: 355/450/532/915/980/1080nm kunye nezinye iibhendi zamaza |
| I-Numerical Aperture (NA) | Ingenziwa ngokwezifiso |
| Indawo esebenzayo yoHlanganisa | Ingenziwa ngokwezifiso |
| Ubude beFocal | ≥500mm (ichaphazeleka yindawo yokudibanisa) |
| Ukupholisa | Ukupholisa Amanzi |
| Ubunzima | 10kg |
| Ubukhulu | Ingenziwa ngokwezifiso |
| Ezinye | Onganyanzelekanga: Imodyuli yokufumanisa ubushushu be-infrared, imodyuli yokuchonga ungcoliseko lwesibuko esikhuselayo |
Ixesha leposi: Julayi-23-2026

